? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c85v v dgr t j = 25 c to 175 c; r gs = 1 m ? 85 v v gsm 20 v i d25 t c = 25 c 160 a i drms external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 350 a i ar t c = 25 c75a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 3 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c to-263 package for 10s m d mounting torque (to-3p / to-220) 1.13/10 nm/lb.in. weight to-3p 5.5 g to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a85v v gs(th) v ds = v gs , i d = 1 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 50 a 5.0 6.0 m ? pulse test, t 300 s, duty cycle d 2 % trench gate power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-3p (ixtq) to-263 (ixta) to-220 (ixtp) g d s (tab) d (tab) g s g s (tab) ixtq 160n085t ixta 160n085t ixtp 160n085t v dss = 85 v i d25 = 160 a r ds(on) = 6.0 m ? ? ? ? ? ds99347(02/05)
ixys reserves the right to change limits, test conditions, and dimensions. ixta 160n085t ixtp 160n085t ixtq 160n085t symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 50a, pulse test 64 85 s c iss 6400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 927 pf c rss 92 pf t d(on) 37 ns t r v gs = 10 v, v ds = 60 v, i d = 35a 61 ns t d(off) r g = 5 ? (external) 65 ns t f 36 ns q g(on) 164 nc q gs v gs = 10 v, v ds = 40 v, i d = 80 a 48 nc q gd 45 nc r thjc 0.42 k/w r thck (to-3p) 0.21 k/w (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 160 a i sm repetitive 350 a v sd i f = 50 a, v gs = 0 v, 1.2 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 100 ns q rm v r = 25 v, v gs = 0 v 0.6 c to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2005 ixys all rights reserved ixta 160n085t ixtp 160n085t ixtq 160n085t fig. 2. extended output characteristics @ 25 c 0 40 80 120 160 200 240 280 320 00.5 11.5 22.5 33.5 4 v d s - volts i d - amperes v gs = 10v 9v 8v 4v 6v 7v 5v fig. 3. output characteristics @ 150 c 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 3v 4v 5v 6v fig. 1. output characteristics @ 25 c 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 5v 4v 6v fig. 4. r ds(on ) norm alized to i d = 50a value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 100a i d = 50a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to i d = 50a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 40 80 120 160 200 240 280 320 i d - amperes r d s ( o n ) - normalize d t j = 25 c t j = 175 c v gs = 10v 15v - - - - -
ixys reserves the right to change limits, test conditions, and dimensions. ixta 160n085t ixtp 160n085t ixtq 160n085t fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 q g - nanocoulombs v g s - volts v ds = 42.5v i d = 80a i g = 10ma fig. 7. input admittance 0 40 80 120 160 200 240 2.533.544.555.56 v g s - volts i d - amperes t j = -40 o c 25 o c 150 o c fig. 8. transconductance 0 20 40 60 80 100 120 140 0 40 80 120 160 200 240 280 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe ope r ating are a 10 100 1000 1 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25s
? 2005 ixys all rights reserved ixta 160n085t ixtp 160n085t ixtq 160n085t fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
|
